- Product Model FBG30N04CSH
- Brand EPC Space
- RoHS No
- Description GANFET 2N-CH 300V 4A 4SMD
- Categories Массивы полевых транзисторов, МОП-транзисторов
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PDF
- In Stock 1550
Technical Details
- Package / Case 4-SMD, No Lead
- Mounting Type Surface Mount
- Configuration 2 N-Channel
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss) 300V
- Current - Continuous Drain (Id) @ 25°C 4A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 450pF @ 150V
- Rds On (Max) @ Id, Vgs 404mOhm @ 4A, 5V
- Gate Charge (Qg) (Max) @ Vgs 2.6nC @ 5V
- Vgs(th) (Max) @ Id 2.8V @ 600µA
- Supplier Device Package 4-SMD
- ECCN 9A515E1
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)


