- Product Model HP8KE7TB1
- Brand ROHM Semiconductor
- RoHS No
- Description MOSFET 2N-CH 100V 10A/24A 8HSOP
- Categories Массивы полевых транзисторов, МОП-транзисторов
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- In Stock 3975
Technical Details
- Package / Case 8-PowerTDFN
- Mounting Type Surface Mount
- Configuration 2 N-Channel
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- Power - Max 3W (Ta), 26W (Tc)
- Drain to Source Voltage (Vdss) 100V
- Current - Continuous Drain (Id) @ 25°C 10A (Ta), 24A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 50V
- Rds On (Max) @ Id, Vgs 19.6mOhm @ 10A, 10V
- Gate Charge (Qg) (Max) @ Vgs 19.8nC @ 10V
- Vgs(th) (Max) @ Id 2.5V @ 1mA
- Supplier Device Package 8-HSOP
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)


