- Product Model SH63N65DM6AG
- Brand STMicroelectronics
- RoHS Yes
- Description MOSFET 2N-CH 650V 53A 9ACEPACK
- Categories Массивы полевых транзисторов, МОП-транзисторов
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- In Stock 1546
Technical Details
- Package / Case 9-PowerSMD
- Mounting Type Surface Mount
- Configuration 2 N-Channel (Half Bridge)
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- Power - Max 424W (Tc)
- Drain to Source Voltage (Vdss) 650V
- Current - Continuous Drain (Id) @ 25°C 53A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 3344pF @ 100V
- Rds On (Max) @ Id, Vgs 64mOhm @ 23A, 10V
- Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
- Vgs(th) (Max) @ Id 4.75V @ 250µA
- Supplier Device Package 9-ACEPACK SMIT
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- REACH Status REACH Affected
- RoHS Status ROHS3 Compliant


