- Product Model G2R1000MT33J-TR
- Brand GeneSiC Semiconductor
- RoHS Yes
- Description 3300V 1000M TO-263-7 G2R SIC MOS
- Categories Одиночные полевые транзисторы, МОП-транзисторы
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PDF
- In Stock 2275
Technical Details
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiC (Silicon Carbide Junction Transistor)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 5A (Tc)
- Rds On (Max) @ Id, Vgs 1.2Ohm @ 2A, 20V
- Power Dissipation (Max) 74W (Tc)
- Vgs(th) (Max) @ Id 3.5V @ 2mA
- Supplier Device Package TO-263-7
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Vgs (Max) +20V, -5V
- Drain to Source Voltage (Vdss) 3300 V
- Gate Charge (Qg) (Max) @ Vgs 21 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds 238 pF @ 1000 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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