- Product Model IXTH6N100D2
- Brand Littelfuse / IXYS RF
- RoHS Yes
- Description MOSFET N-CH 1000V 6A TO247
- Categories Одиночные полевые транзисторы, МОП-транзисторы
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PDF
- In Stock 2079
Technical Details
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 6A (Tc)
- Rds On (Max) @ Id, Vgs 2.2Ohm @ 3A, 0V
- FET Feature Depletion Mode
- Power Dissipation (Max) 300W (Tc)
- Supplier Device Package TO-247 (IXTH)
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 1000 V
- Gate Charge (Qg) (Max) @ Vgs 95 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds 2650 pF @ 25 V
- California Prop 65 California Prop 65 Information
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


