Technical Details

• Package / Case 8-PowerTDFN
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 110A (Tc)
• Rds On (Max) @ Id, Vgs 2.65mOhm @ 20A, 10V
• Power Dissipation (Max) 56W (Tc)
• Vgs(th) (Max) @ Id 2.5V @ 250µA
• Supplier Device Package 8-QFN (5x6)
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 30 V
• Gate Charge (Qg) (Max) @ Vgs 14 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds 1860 pF @ 15 V
• ECCN EAR99
• HTSUS 8541.29.0095