- Product Model BSZ900N15NS3GATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET N-CH 150V 13A 8TSDSON
- Categories Одиночные полевые транзисторы, МОП-транзисторы
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- In Stock 14839
Technical Details
- Package / Case 8-PowerTDFN
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 13A (Tc)
- Rds On (Max) @ Id, Vgs 90mOhm @ 10A, 10V
- Power Dissipation (Max) 38W (Tc)
- Vgs(th) (Max) @ Id 4V @ 20µA
- Supplier Device Package PG-TSDSON-8
- Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 150 V
- Gate Charge (Qg) (Max) @ Vgs 7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 510 pF @ 75 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


