- Product Model PMDPB65UP,115
- Brand NXP Semiconductors
- RoHS Yes
- Description MOSFET 2P-CH 20V 3.5A 6HUSON
- Categories Массивы полевых транзисторов, МОП-транзисторов
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- In Stock 1500
Technical Details
- Package / Case 6-UDFN Exposed Pad
- Mounting Type Surface Mount
- Configuration 2 P-Channel (Dual)
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- Power - Max 520mW
- Drain to Source Voltage (Vdss) 20V
- Current - Continuous Drain (Id) @ 25°C 3.5A
- Input Capacitance (Ciss) (Max) @ Vds 380pF @ 10V
- Rds On (Max) @ Id, Vgs 70mOhm @ 1A, 4.5V
- Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
- FET Feature Logic Level Gate
- Vgs(th) (Max) @ Id 1V @ 250µA
- Supplier Device Package 6-HUSON (2x2)
- ECCN EAR99
- HTSUS 8541.21.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


