Technical Details

• Package / Case SP3
• Configuration 4 N-Channel (Full Bridge) + Bridge Rectifier
• Operating Temperature -40°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 250W
• Drain to Source Voltage (Vdss) 600V
• Current - Continuous Drain (Id) @ 25°C 39A
• Input Capacitance (Ciss) (Max) @ Vds 7000pF @ 25V
• Rds On (Max) @ Id, Vgs 70mOhm @ 39A, 10V
• Gate Charge (Qg) (Max) @ Vgs 259nC @ 10V
• Vgs(th) (Max) @ Id 3.9V @ 2.7mA
• Supplier Device Package SP3
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant