- Product Model ALD212900PAL
- Brand Advanced Linear Devices, Inc.
- RoHS Yes
- Description MOSFET 2N-CH 10.6V 0.08A 8DIP
- Categories Массивы полевых транзисторов, МОП-транзисторов
- In Stock 1546
Technical Details
- Package / Case 8-DIP (0.300", 7.62mm)
- Mounting Type Through Hole
- Configuration 2 N-Channel (Dual) Matched Pair
- Operating Temperature 0°C ~ 70°C (TJ)
- Technology MOSFET (Metal Oxide)
- Power - Max 500mW
- Drain to Source Voltage (Vdss) 10.6V
- Current - Continuous Drain (Id) @ 25°C 80mA
- Input Capacitance (Ciss) (Max) @ Vds 30pF @ 5V
- Rds On (Max) @ Id, Vgs 14Ohm
- FET Feature Logic Level Gate
- Vgs(th) (Max) @ Id 20mV @ 20µA
- Supplier Device Package 8-PDIP
- California Prop 65 California Prop 65 Information
- ECCN EAR99
- HTSUS 8541.21.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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