Technical Details

• Package / Case 55JT
• Mounting Type Chassis Mount
• Transistor Type NPN
• Operating Temperature 200°C (TJ)
• Gain 7dB ~ 8.5dB
• Power - Max 270W
• Current - Collector (Ic) (Max) 16A
• Voltage - Collector Emitter Breakdown (Max) 60V
• DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 1A, 5V
• Frequency - Transition 225MHz ~ 400MHz
• Supplier Device Package 55JT
• ECCN EAR99
• HTSUS 8541.29.0075
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected