Technical Details

• Configuration 4 P-Channel
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 2W
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 600mA
• Input Capacitance (Ciss) (Max) @ Vds 150pF @ 15V
• Rds On (Max) @ Id, Vgs 2Ohm @ 1A, 12V
• Vgs(th) (Max) @ Id 4.5V @ 1mA
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status RoHS non-compliant