- Product Model RQ3E180BNTB
- Brand ROHM Semiconductor
- RoHS Yes
- Description MOSFET N-CHANNEL 30V 39A 8HSMT
- Categories Одиночные полевые транзисторы, МОП-транзисторы
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- In Stock 6710
Technical Details
- Package / Case 8-PowerVDFN
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 39A (Tc)
- Rds On (Max) @ Id, Vgs 3.9mOhm @ 18A, 10V
- Power Dissipation (Max) 2W (Ta), 20W (Tc)
- Vgs(th) (Max) @ Id 2.5V @ 1mA
- Supplier Device Package 8-HSMT (3.2x3)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 30 V
- Gate Charge (Qg) (Max) @ Vgs 37 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds 3500 pF @ 15 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


