- Product Model STW28N65M2
- Brand STMicroelectronics
- RoHS Yes
- Description MOSFET N-CH 650V 20A TO247
- Categories Одиночные полевые транзисторы, МОП-транзисторы
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PDF
- In Stock 2060
Technical Details
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 20A (Tc)
- Rds On (Max) @ Id, Vgs 180mOhm @ 10A, 10V
- Power Dissipation (Max) 170W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package TO-247-3
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±25V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1440 pF @ 100 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


