- Product Model APTMC120HR11CT3G
- Brand Microsemi Corporation
- RoHS No
- Description SIC 2N-CH 1200V 26A SP3
- Categories Массивы полевых транзисторов, МОП-транзисторов
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PDF
- In Stock 1500
Technical Details
- Package / Case SP3
- Mounting Type Chassis Mount
- Configuration 2 N-Channel (Dual)
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology Silicon Carbide (SiC)
- Power - Max 125W
- Drain to Source Voltage (Vdss) 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C 26A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 950pF @ 1000V
- Rds On (Max) @ Id, Vgs 98mOhm @ 20A, 20V
- Gate Charge (Qg) (Max) @ Vgs 62nC @ 20V
- Vgs(th) (Max) @ Id 3V @ 5mA
- Supplier Device Package SP3
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)


