- Product Model BSC0911NDATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET 2N-CH 25V 18A/30A TISON8
- Categories Массивы полевых транзисторов, МОП-транзисторов
-
PDF
- In Stock 6359
Technical Details
- Package / Case 8-PowerTDFN
- Mounting Type Surface Mount
- Configuration 2 N-Channel (Dual) Asymmetrical
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- Power - Max 1W
- Drain to Source Voltage (Vdss) 25V
- Current - Continuous Drain (Id) @ 25°C 18A, 30A
- Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 12V
- Rds On (Max) @ Id, Vgs 3.2mOhm @ 20A, 10V
- Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
- FET Feature Logic Level Gate, 4.5V Drive
- Vgs(th) (Max) @ Id 2V @ 250µA
- Supplier Device Package PG-TISON-8
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
Related Products
MOSFET N-CH 200V 52A TSON-8
In Stock: 13111
MOSFET 2N-CH 25V 19A/41A TISON8
In Stock: 8865
MOSFET N/P-CH 30V 1.4A TSOP6-6
In Stock: 93820
MOSFET N-CH 34V 9A/36A 8TSDSON
In Stock: 43429
MOSFET N-CH 250V 25A D2PAK
In Stock: 6458
MOSFET N-CH 40V 23A DIRECTFET
In Stock: 5068
IRF6613 - 12V-300V N-CHANNEL POW
In Stock: 23643
IC UNIV BUS TXRX 16BIT 64TSSOP
In Stock: 3140
