- Product Model SIHH26N60E-T1-GE3
- Brand Vishay / Siliconix
- RoHS Yes
- Description MOSFET N-CH 600V 25A PPAK 8 X 8
- Categories Одиночные полевые транзисторы, МОП-транзисторы
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PDF
- In Stock 7306
Technical Details
- Package / Case 8-PowerTDFN
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 25A (Tc)
- Rds On (Max) @ Id, Vgs 135mOhm @ 13A, 10V
- Power Dissipation (Max) 202W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package PowerPAK® 8 x 8
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 600 V
- Gate Charge (Qg) (Max) @ Vgs 116 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 2815 pF @ 100 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status Vendor Undefined
- RoHS Status ROHS3 Compliant


