- Product Model BSZ215CHXTMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET N/P-CH 20V 8TSDSON
- Categories Массивы полевых транзисторов, МОП-транзисторов
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- In Stock 7405
Technical Details
- Package / Case 8-PowerTDFN
- Mounting Type Surface Mount
- Configuration N and P-Channel Complementary
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- Power - Max 2.5W
- Drain to Source Voltage (Vdss) 20V
- Current - Continuous Drain (Id) @ 25°C 5.1A, 3.2A
- Input Capacitance (Ciss) (Max) @ Vds 419pF @ 10V
- Rds On (Max) @ Id, Vgs 55mOhm @ 5.1A, 4.5V
- Gate Charge (Qg) (Max) @ Vgs 2.8nC @ 4.5V
- FET Feature Logic Level Gate, 2.5V Drive
- Vgs(th) (Max) @ Id 1.4V @ 110µA
- Supplier Device Package PG-TSDSON-8
- Grade Automotive
- Qualification AEC-Q101
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


