- Product Model IPD60N10S412ATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET N-CH 100V 60A TO252-3
- Categories Одиночные полевые транзисторы, МОП-транзисторы
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- In Stock 7336
Technical Details
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 60A (Tc)
- Rds On (Max) @ Id, Vgs 12.2mOhm @ 60A, 10V
- Power Dissipation (Max) 94W (Tc)
- Vgs(th) (Max) @ Id 3.5V @ 46µA
- Supplier Device Package PG-TO252-3-313
- Grade Automotive
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 2470 pF @ 25 V
- Qualification AEC-Q101
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


