Technical Details

• Package / Case Module
• Configuration 2 N-Channel (Half Bridge)
• Operating Temperature 175°C (TJ)
• Technology Silicon Carbide (SiC)
• Power - Max 3000W
• Drain to Source Voltage (Vdss) 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C 444A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 19500pF @ 1000V
• Rds On (Max) @ Id, Vgs 4.3mOhm @ 400A, 20V
• Gate Charge (Qg) (Max) @ Vgs 1127nC @ 20V
• Vgs(th) (Max) @ Id 4V @ 105mA
• Supplier Device Package Module
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) Not Applicable
• RoHS Status RoHS Compliant