Technical Details

• Package / Case 20-SOIC (0.433", 11.00mm Width) Exposed Pad
• Mounting Type Surface Mount
• Configuration 3 N and 3 P-Channel (3-Phase Bridge)
• Operating Temperature 175°C
• Technology MOSFET (Metal Oxide)
• Power - Max 54W
• Drain to Source Voltage (Vdss) 60V
• Current - Continuous Drain (Id) @ 25°C 20A
• Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 10V
• Rds On (Max) @ Id, Vgs 20mOhm @ 10A, 10V
• Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
• FET Feature Logic Level Gate, 4.5V Drive
• Vgs(th) (Max) @ Id 2.5V @ 1mA
• Supplier Device Package 20-HSOP
• Grade Automotive
• Qualification AEC-Q101
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant