- Product Model BSM080D12P2C008
- Brand ROHM Semiconductor
- RoHS Yes
- Description SIC 2N-CH 1200V 80A MODULE
- Categories Массивы полевых транзисторов, МОП-транзисторов
-
PDF
- In Stock 1515
Technical Details
- Package / Case Module
- Mounting Type Chassis Mount
- Configuration 2 N-Channel (Dual)
- Operating Temperature 175°C (TJ)
- Technology Silicon Carbide (SiC)
- Power - Max 600W
- Drain to Source Voltage (Vdss) 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C 80A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 800pF @ 10V
- Vgs(th) (Max) @ Id 4V @ 13.2mA
- Supplier Device Package Module
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
Related Products
1200V, 134A, CHOPPER, SILICON-CA
In Stock: 1507
SICFET N-CH 1200V 204A MODULE
In Stock: 1504
SIC 2N-CH 1200V 204A MODULE
In Stock: 1500
SIC 2N-CH 1200V 180A MODULE
In Stock: 1501
SIC 2N-CH 1700V 250A MODULE
In Stock: 1531
SIC 2N-CH 1200V 300A MODULE
In Stock: 1526
SIC 2N-CH 1200V 400A MODULE
In Stock: 1504
MOSFET 2 N-CH 1200V MODULE
In Stock: 1508
MOSFET 2N-CH 1200V 193A MODULE
In Stock: 1551
