• In Stock 6171

Technical Details

  • Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Mounting Type Surface Mount
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Technology MOSFET (Metal Oxide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 4A (Tc)
  • Rds On (Max) @ Id, Vgs 1.75Ohm @ 2A, 10V
  • Power Dissipation (Max) 60W (Tc)
  • Vgs(th) (Max) @ Id 5V @ 100µA
  • Supplier Device Package DPAK
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Vgs (Max) ±30V
  • Drain to Source Voltage (Vdss) 800 V
  • Gate Charge (Qg) (Max) @ Vgs 5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds 177 pF @ 100 V
  • ECCN EAR99
  • HTSUS 8541.29.0095
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

Related Products


MOSFET P-CH 150V 4.4A/22A 8PQFN

In Stock: 1500

RF MOSFET LDMOS 12.5V POWERSO10

In Stock: 1500

HIGH-SPEED SWITCHING NCH 800V 3A

In Stock: 2418

MOSFET N-CH 600V 4.2A TO252AA

In Stock: 1500

Top