- Product Model IPN60R1K0CEATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET N-CH 600V 6.8A SOT223
- Categories Одиночные полевые транзисторы, МОП-транзисторы
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- In Stock 16450
Technical Details
- Package / Case TO-261-4, TO-261AA
- Mounting Type Surface Mount
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 6.8A (Tc)
- Rds On (Max) @ Id, Vgs 1Ohm @ 1.5A, 10V
- Power Dissipation (Max) 5W (Tc)
- Vgs(th) (Max) @ Id 3.5V @ 130µA
- Supplier Device Package PG-SOT223-3
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 600 V
- Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 280 pF @ 100 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


