Technical Details

• Package / Case 6-VDFN Exposed Pad
• Mounting Type Surface Mount
• Configuration N and P-Channel
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 6.25W
• Drain to Source Voltage (Vdss) 20V
• Current - Continuous Drain (Id) @ 25°C 11.6A (Tc), 9A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 677pF @ 10V, 744pF @ 10V
• Rds On (Max) @ Id, Vgs 30mOhm @ 6.4A, 4.5V, 55mOhm @ 5A, 4.5V
• Gate Charge (Qg) (Max) @ Vgs 9.1nC @ 4.5V, 9.8nC @ 4.5V
• FET Feature Logic Level Gate, 1.8V Drive
• Vgs(th) (Max) @ Id 1V @ 250µA
• Supplier Device Package 6-TDFN (2x2)
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 3 (168 Hours)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant