- Product Model SISH112DN-T1-GE3
- Brand Vishay / Siliconix
- RoHS Yes
- Description MOSFET N-CH 30V 11.3A PPAK
- Categories Одиночные полевые транзисторы, МОП-транзисторы
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- In Stock 7235
Technical Details
- Package / Case PowerPAK® 1212-8SH
- Mounting Type Surface Mount
- Operating Temperature -50°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 11.3A (Tc)
- Rds On (Max) @ Id, Vgs 7.5mOhm @ 17.8A, 10V
- Power Dissipation (Max) 1.5W (Tc)
- Vgs(th) (Max) @ Id 1.5V @ 250µA
- Supplier Device Package PowerPAK® 1212-8SH
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±12V
- Drain to Source Voltage (Vdss) 30 V
- Gate Charge (Qg) (Max) @ Vgs 27 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds 2610 pF @ 15 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- RoHS Status ROHS3 Compliant


