- Product Model BSM600C12P3G201
- Brand ROHM Semiconductor
- RoHS Yes
- Description SICFET N-CH 1200V 600A MODULE
- Categories Одиночные полевые транзисторы, МОП-транзисторы
- In Stock 1500
Technical Details
- Package / Case Module
- Mounting Type Chassis Mount
- Operating Temperature 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 600A (Tc)
- Power Dissipation (Max) 2460W (Tc)
- Vgs(th) (Max) @ Id 5.6V @ 182mA
- Supplier Device Package Module
- Vgs (Max) +22V, -4V
- Drain to Source Voltage (Vdss) 1200 V
- Input Capacitance (Ciss) (Max) @ Vds 28000 pF @ 10 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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