- Product Model GAN7R0-150LBEZ
- Brand Nexperia
- RoHS Yes
- Description 150 V, 7 MOHM GALLIUM NITRIDE (G
- Categories Одиночные полевые транзисторы, МОП-транзисторы
-
PDF
- In Stock 5557
Technical Details
- Package / Case 3-VLGA
- Mounting Type Surface Mount
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 28A
- Rds On (Max) @ Id, Vgs 7mOhm @ 10A, 5V
- Power Dissipation (Max) 28W
- Vgs(th) (Max) @ Id 2.1V @ 5mA
- Supplier Device Package 3-FCLGA (3.2x2.2)
- Drive Voltage (Max Rds On, Min Rds On) 5V
- Vgs (Max) +6V, -4V
- Drain to Source Voltage (Vdss) 150 V
- Gate Charge (Qg) (Max) @ Vgs 7.6 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds 865 pF @ 85 V
- ECCN EAR99
- HTSUS 8541.29.0040
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


