• In Stock 2315

Technical Details

  • Package / Case 8-XFBGA, WLCSP
  • Mounting Type Surface Mount
  • Operating Temperature -40°C ~ 150°C (TJ)
  • Technology GaNFET (Gallium Nitride)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 60A
  • Rds On (Max) @ Id, Vgs 3.2mOhm @ 25A, 5V
  • Power Dissipation (Max) 394W
  • Vgs(th) (Max) @ Id 2.5V @ 9mA
  • Supplier Device Package 8-WLCSP (3.5x2.13)
  • Drive Voltage (Max Rds On, Min Rds On) 5V
  • Vgs (Max) +6V, -4V
  • Drain to Source Voltage (Vdss) 100 V
  • Gate Charge (Qg) (Max) @ Vgs 12 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 50 V
  • ECCN EAR99
  • HTSUS 8541.29.0095
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

Related Products


GANFET N-CH 40V 29A DIE

In Stock: 35995

GANFET 2N-CH 120V 3.4A DIE

In Stock: 15925

TRANS GAN 100V DIE .0018OHM

In Stock: 51140

GAN041-650WSB/SOT429/TO-247

In Stock: 1763

650 V, 190 MOHM GALLIUM NITRIDE

In Stock: 3471

150 V, 7 MOHM GALLIUM NITRIDE (G

In Stock: 5557

N-CHANNEL MOSFET,DFN5060

In Stock: 19197

MOSFET 2N-CH 40V 42A LFPAK56D

In Stock: 3071

650 V 13 A GAN FET

In Stock: 7387

Top