- Product Model FF4MR12W2M1HB11BPSA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description SIC 2N-CH 1200V 170A MODULE
- Categories Массивы полевых транзисторов, МОП-транзисторов
- In Stock 1509
Technical Details
- Package / Case Module
- Mounting Type Chassis Mount
- Configuration 2 N-Channel (Half Bridge)
- Operating Temperature -40°C ~ 175°C (TJ)
- Technology Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss) 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C 170A (Tj)
- Input Capacitance (Ciss) (Max) @ Vds 17600pF @ 800V
- Rds On (Max) @ Id, Vgs 4mOhm @ 200A, 18V
- Gate Charge (Qg) (Max) @ Vgs 594nC @ 18V
- Vgs(th) (Max) @ Id 5.15V @ 80mA
- Supplier Device Package Module
- ECCN EAR99
- HTSUS 8542.39.0001
- Moisture Sensitivity Level (MSL) Not Applicable
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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