- Product Model GPI65007DF88
- Brand GaNPower
- RoHS Yes
- Description GaNFET N-CH 650V 7A DFN8x8
- Categories Одиночные полевые транзисторы, МОП-транзисторы
-
PDF
- In Stock 2000
Technical Details
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 7A
- Vgs(th) (Max) @ Id 1.5V @ 3.5mA
- Drive Voltage (Max Rds On, Min Rds On) 6V
- Vgs (Max) +7.5V, -12V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 2.1 nC @ 6 V
- Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 500 V
- ECCN 3A001
- HTSUS 8541.49.7000
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- REACH Status REACH Unaffected
- RoHS Status RoHS Compliant
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