- Product Model G180C06Y
- Brand Goford Semiconductor
- RoHS Yes
- Description MOSFET N/P-CH 60V 50A TO252-4
- Categories Массивы полевых транзисторов, МОП-транзисторов
-
PDF
- In Stock 3658
Technical Details
- Package / Case TO-252-5, DPAK (4 Leads + Tab), TO-252AD
- Mounting Type Surface Mount
- Configuration N and P-Channel, Common Drain
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- Power - Max 69W (Tc), 115W (Tc)
- Drain to Source Voltage (Vdss) 60V
- Current - Continuous Drain (Id) @ 25°C 50A (Tc), 60A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 2429pF @ 30V, 4471pF @ 30V
- Rds On (Max) @ Id, Vgs 17mOhm @ 20A, 10V, 23mOhm @ 10A, 10V
- Gate Charge (Qg) (Max) @ Vgs 39nC @ 4.5V, 62nC @ 4.5V
- Vgs(th) (Max) @ Id 2V @ 250µA, 4V @ 250µA
- Supplier Device Package TO-252-4
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status RoHS Compliant
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