- Product Model BSM180D12P2C101
- Brand ROHM Semiconductor
- RoHS Yes
- Description SIC 2N-CH 1200V 204A MODULE
- Classification FET, MOSFET Arrays
Technical Details
- Package / Case Module
- Configuration 2 N-Channel (Half Bridge)
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology Silicon Carbide (SiC)
- Power - Max 1130W
- Drain to Source Voltage (Vdss) 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C 204A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 23000pF @ 10V
- Vgs(th) (Max) @ Id 4V @ 35.2mA
- Supplier Device Package Module
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