- Product Model TPD3215M
- Brand Transphorm
- RoHS No
- Description GANFET 2N-CH 600V 70A MODULE
- Categories Массивы полевых транзисторов, МОП-транзисторов
-
PDF
- In Stock 1500
Technical Details
- Package / Case Module
- Mounting Type Through Hole
- Configuration 2 N-Channel (Half Bridge)
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- Power - Max 470W
- Drain to Source Voltage (Vdss) 600V
- Current - Continuous Drain (Id) @ 25°C 70A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 2260pF @ 100V
- Rds On (Max) @ Id, Vgs 34mOhm @ 30A, 8V
- Gate Charge (Qg) (Max) @ Vgs 28nC @ 8V
- Supplier Device Package Module
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
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